| PART |
Description |
Maker |
| ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220J |
280W GaN WIDEBAND PULSED POWER
|
RF Micro Devices
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| MAGX-000035-01000P-V2 MAGX-000035-01000P-15 |
GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-000035-09000P-15 |
GaN Wideband 90 W Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solu...
|
| MAGX-001090-600L00 MAGX-001090-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-002731-SB2PPR MAGX-002731-100L00 MAGX-002731- |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MSX025BADNC |
X-Band GaN SSPA
|
Teledyne Technologies I...
|
| QPB1500 QPB1500S2 QPB1500PCB4B01 |
Ku-Band 25 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| 1214-700P1 |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-700P |
Pulsed Power L-Band (Si)
|
Microsemi
|
